Preparation and Characterization of Pb(Zr,Ti)O3Films Deposited on Pt/RuO2Hybrid Electrode for Ferroelectric Random Access Memory Devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication and physical properties of bismuth layer-structured ferroelectric thin films with c-axis orientation epitaxially grown by high-temperature sputtering;Japanese Journal of Applied Physics;2019-08-23
2. Enhanced energy storage property and dielectric tunability of Na0.5Bi0.5(Ti,W,Ni)O3 thin film on Bi(Fe,Mn)O3 buffered LaNiO3(100)/Si substrate;Journal of Materials Science: Materials in Electronics;2018-07-04
3. Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains;ACS Applied Materials & Interfaces;2017-03-08
4. Electrode interface controlled electrical properties in epitaxial Pb(Zr0.52Ti0.48)O3 films grown on Si substrates with SrTiO3 buffer layer;Thin Solid Films;2015-10
5. Effect of Al-doped ZnO or Sn-doped In2O3electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3capacitors;Japanese Journal of Applied Physics;2015-04-08
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