Self-Assembled GaN Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Self-Assembled GaN Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy

Published:2001-03-30 Issue:Part 1, No. 3B Volume:40 Page:1892-1895
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Daudin Bruno,Feuillet Guy,Mariette Henri,Mula Guido,Pelekanos Nikolaos,Molva Engin,Rouvière Jean-Luc,Adelmann Christoph,Guerrero -,Barjon Julien,Chabuel Francis,Bataillou Benoit,Simon Julia

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphology of GaN Monolayers Grown on AlN Surface During Ammonia Flow Cycling;2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM);2022-06-30

2. Transformation of the elemental composition on the GaN surface during a 2D-3D transition;Applied Surface Science;2022-03

3. Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy;Journal of Crystal Growth;2018-07

4. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy;physica status solidi (b);2017-11-30

5. Low temperature non radiative process's effects on the optical emission of GaN/Al 0.5 Ga 0.5 N nanostructures;Journal of Luminescence;2017-03

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