Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

Published:2017-11-30 Issue:3 Volume:255 Page:1600729
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Blumenthal Sarah¹,Rieger Torsten²,Meertens Doris³,Pawlis Alexander²,Reuter Dirk¹,As Donat J.¹^ORCID

Affiliation:

1. Department of Physics University of Paderborn; Warburger Str. 100 33098 Paderborn Germany

2. Peter Grünberg Institut Forschungszentrum Jülich; 52428 Jülich Germany

3. Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons Forschungszentrum Jülich; 52428 Jülich Germany

Funder

DFG graduate program

Collaborative Research Centre

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201600729/fullpdf

Reference28 articles.

1. Room‐temperature lasing operation of a quantum‐dot vertical‐cavity surface‐emitting laser

2. High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

3. Stranski–Krastanow growth of stacked GaN quantum dots with intense photoluminescence

4. Photon correlation studies of single GaN quantum dots

5. Molecular beam epitaxy based growth of cubic GaN quantum dots

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-particle and collective excitations in quantum wires comprised of vertically stacked quantum dots: Finite magnetic field;Modern Physics Letters B;2020-12-23

2. Heavy and light exciton states in c-AlGaN/GaN asymmetric double quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2020-10

3. Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots;Revista Mexicana de Física;2019-05-07

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