Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge-Reference-Cited by-同舟云学术

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Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge

Published:2001-06-30 Issue:Part 1, No. 6B Volume:40 Page:4292-4298
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Xue-Sen,Li Zongquan,Wang Lei,Hu Yanfang,Zhai Guangjie,Yang Jianshu,Wang Yuqi,Fung Kwok-Kwong,Tang Jing-Chang,Wang Xun,Cue Nelson

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A spectroscopy and microscopy study of silicon nanoclusters grown on β-Si3N4(0 0 0 1)/Si(1 1 1) interface;Applied Surface Science;2019-02

2. Thickness of silicon-nitride antireflective coating on a silicon waveguide measured by an integrated micromechanical gauge;Journal of Micro/Nanolithography, MEMS, and MOEMS;2006-04-01

3. Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN;Nanotechnology;2002-11-08

4. Ge islanding growth on nitridized Si and the effect of Sb surfactant;Journal of Physics: Condensed Matter;2002-09-20

5. Nanoparticles, Nanorods, and Other Nanostructures Assembled on Inert Substrates;Topics in Applied Physics

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