Ge islanding growth on nitridized Si and the effect of Sb surfactant
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=39/a=303/pdf
Reference19 articles.
1. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
2. Surface characterization of silicon on insulator material
3. Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge
4. Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization
5. Modification of growth kinetics in surfactant-mediated epitaxy
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1. Ultra-thin high-quality silicon nitride films on Si(111);EPL (Europhysics Letters);2011-04-01
2. Lateral crystallization of amorphous silicon by germanium seeding;Microelectronic Engineering;2006-11
3. IN SITU STM INVESTIGATION OF Ge NANOSTRUCTURES WITH AND WITHOUT Sb ON GRAPHITE;Surface Review and Letters;2006-04
4. Nanoparticles, Nanorods, and Other Nanostructures Assembled on Inert Substrates;Topics in Applied Physics
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