The Role of an Overlayer in the Formation of Ni-based Transparent Ohmic Contacts to p-GaN-Reference-Cited by-同舟云学术

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The Role of an Overlayer in the Formation of Ni-based Transparent Ohmic Contacts to p-GaN

Published:2001-11-15 Issue:Part 1, No. 11 Volume:40 Page:6221-6225
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kwak Joon Seop,Cho J.,Chae S.,Nam O. H.,Sone C.,Park Y.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of Ni/Au/Ni/Au ohmic contact in a p-AlGaN/GaN semiconductor;IOP Conference Series: Materials Science and Engineering;2020-02-01

2. One-step synthesis and decoration of nickel oxide nanosheets with gold nanoparticles by reduction method for hydrazine sensing application;Sensors and Actuators B: Chemical;2019-05

3. Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications;Applied Physics A;2018-12-12

4. Formation of low resistance Ti/Al-based ohmic contacts on (11–22) semipolar n-type GaN;Journal of Alloys and Compounds;2015-12

5. Electronic and transport properties of a nanometer-scale Au/AlN(0001)/Au junction from first-principles;Applied Physics Letters;2011-01-31

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