Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications-Reference-Cited by-同舟云学术

Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications

Published:2018-12-12 Issue:1 Volume:125 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Singh Kuldip,Chauhan Ashok,Mathew Manish,Punia Rajesh,Meena Sher Singh,Gupta Nidhi,Kundu Rajender Singh

Funder

CSIR

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/article/10.1007/s00339-018-2322-x/fulltext.html

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