Enhancement of Light Extraction from GaN-Based Light-Emitting Diodes by Coating Surface with Al2O3Powder-Reference-Cited by-同舟云学术

Enhancement of Light Extraction from GaN-Based Light-Emitting Diodes by Coating Surface with Al2O3Powder

Published:2009-02-20 Issue:2 Volume:48 Page:021002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Tae Ki,Kim Seung Hwan,Yang Seong Seok,Son Jeong Kwon,Lee Keon Hwa,Bae Seong Jun,Shim Sang Kyun,Son Seong Jin,Lee Jeong Su,Shim Kyu-Hwan,Lim Kee Young,Yang Gye Mo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions

3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

4. GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate

5. Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

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