Investigation of the Relationship between Whole-Wafer Strength and Control of Its Edge Engineering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference5 articles.
1. Fracture Strength Measurement of Silicon Chips
2. Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing
3. Mechanical properties of heat‐treated Czochralski‐grown silicon crystals
4. Effects of Wafer Thinning Condition on the Roughness, Morphology and Fracture Strength of Silicon Die
5. Testing and Evaluation of Silicon Die Strength
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1. Laser recovery of grinding-induced subsurface damage in the edge and notch of a single-crystal silicon wafer;Surface Topography: Metrology and Properties;2019-02-07
2. Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon;Crystals;2017-11-14
3. Crystalline damage in silicon wafers and 'rare event' failure introduced by low-energy mechanical impact;Materials Science in Semiconductor Processing;2017-06
4. X-ray asterism and the structure of cracks from indentations in silicon;Journal of Applied Crystallography;2016-02-01
5. The geometry of catastrophic fracture during high temperature processing of silicon;International Journal of Fracture;2015-09
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