Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping-Reference-Cited by-同舟云学术

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Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Published:2009-03-23 Issue:3 Volume:48 Page:034505
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Li Zun-Chao,Zhang Rui-Zhi,Jiang Yao-Lin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 2D Analytical Modeling and Simulation of Double Halo Triple Material Surrounding Gate (DH-TMSG) MOSFET;Silicon;2020-07-31

2. Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si_1-xGe_x Virtual Substrate;IEICE Transactions on Electronics;2016

3. A 2D Analytical Modeling of Single Halo Triple Material Surrounding Gate (SHTMSG) MOSFET;Journal of Electrical Engineering and Technology;2014-07-01

4. A 2D sub-threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs;Microelectronics Journal;2014-06

5. Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric;Chinese Physics B;2012-04

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