A 2D Analytical Modeling and Simulation of Double Halo Triple Material Surrounding Gate (DH-TMSG) MOSFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00617-9.pdf
Reference20 articles.
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2. Chiang TK (2006) A new two-dimensional analytical model for threshold voltage in undoped surrounding-gate MOSFETs.2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, Shanghai, 2006, pp. 1234-1238
3. Kaur H, Kabra S, Haldar S, Gupta RS (2007) An analytical drain current model for Graded Channel cylindrical/surrounding gate MOSFET. Microelectron J 38(3):352–359
4. Nitayami A, Takato H, Okabe N, Sunouchi K, Hieda HF, Masuoka F (1991) Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits. IEEE Trans Electron Devices 38(3):579–583
5. Srivastava VM, Yadav KS, Singh GD (2011) Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch. Microelectron J 42(10):1124–1135
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