Influence of trap carriers in SiO2/HfO2 stacked dielectric cylindrical gate tunnel fet
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01263-5.pdf
Reference24 articles.
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3. Seabaugh AC, Zhang Q (2010) Low-voltage tunnel transistors for beyond CMOS logic. Proc IEEE 98(12):2095–2110
4. Gandhi R, Chen Z, Singh N, Banerjee K, Lee S (2011) Vertical Si-nanowire n-type tunneling FETs with low subthreshold swing at room temperature. IEEE Electron Device Lett 32(4):437–439
5. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373):329–337
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