Room-Temperature Phonon Replica in Band-to-Band Transition of 6H-SiC Analyzed Using Transmission Spectrums-Reference-Cited by-同舟云学术

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Room-Temperature Phonon Replica in Band-to-Band Transition of 6H-SiC Analyzed Using Transmission Spectrums

Published:2009-10-05 Issue:10 Volume:48 Page:100204
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Wei,Chen Zhi-Zhan,Chen Bo-Yuan,Li Zheng-Zheng,Chang Shao-Hui,Yan Cheng-Fen,Shi Er-Wei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference19 articles.

1. Commercial SiC device processing: Status and requirements with respect to SiC based power devices

2. Exciton Recombination Radiation and Phonon Spectrum of6HSiC

3. Fine Structure of the long-wavelength edge of exciton-phonon absorption and hyperbolic excitons in silicon carbide of 6H polytype

4. Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC

5. Fundamental band edge absorption in nominally undoped and doped 4H‐SiC

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Factors that affect intention to revisit of tourists in Semarang;AIP Conference Proceedings;2018

2. Effects of substrate crystallinity on the on-state resistance of 6H–SiC photoconductive switches;Journal of Materials Research;2012-08-15

3. A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H- and 6H-SiC crystals;Journal of Physics D: Applied Physics;2011-08-23

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