Effects of substrate crystallinity on the on-state resistance of 6H–SiC photoconductive switches-Reference-Cited by-同舟云学术

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Effects of substrate crystallinity on the on-state resistance of 6H–SiC photoconductive switches

Published:2012-08-15 Issue:1 Volume:28 Page:38-43
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Huang Wei,Chang Shao-Hui,Liu Xue-Chao,Shi Biao,Zhou Tian-Yu,Liu Xi,Yan Cheng-Fen,Zhen Yan-Qing,Yang Jian-Hua,Shi Er-Wei

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Room-Temperature Phonon Replica in Band-to-Band Transition of 6H-SiC Analyzed Using Transmission Spectrums

2. 4H–SiC photoconductive switching devices for use in high-power applications

3. Fermi level control and deep levels in semi-insulating 4H–SiC

4. Picosecond optoelectronic switching and gating in silicon

5. Compact Silicon Carbide Switch For High Voltage Operation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors;Advanced Optical Materials;2013-08-07

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