Advantage of Highly Concentrated (≥90%) Ozone for Chemical Vapor Deposition SiO2Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone-Reference-Cited by-同舟云学术

Advantage of Highly Concentrated (≥90%) Ozone for Chemical Vapor Deposition SiO2Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone

Published:2009-05-20 Issue:5 Volume:48 Page:05DB01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kameda Naoto,Nishiguchi Tetsuya,Morikawa Yoshiki,Kekura Mitsuru,Nonaka Hidehiko,Ichimura Shingo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference11 articles.

1. General Relationship for the Thermal Oxidation of Silicon

2. High Quality Gate Dielectric Film on Poly-Silicon Grown at Room Temperature using UV Light Excited Ozone

3. Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone

4. Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 °C

5. Reactive oxygen beam generation system using pulsed laser evaporation of highly concentrated solid ozone

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3. Oxidation characteristics of silicon exposed to O(1D2) and O(3P2) radicals and stress-relaxation oxidation model for O(1D2) radicals;Japanese Journal of Applied Physics;2014-02-04

4. Surface-Treatment Methods Using Ozone;Journal of the Vacuum Society of Japan;2013

5. Improvement in Chemical-Vapor-Deposited-SiO2Film Properties by Annealing with UV-Light-Excited Ozone;Japanese Journal of Applied Physics;2009-11-20