Reactive oxygen beam generation system using pulsed laser evaporation of highly concentrated solid ozone
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1448909
Reference25 articles.
1. Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates
2. Ultrathin Oxide Film Formation Using Radical Oxygen in an Ultrahigh Vacuum System
3. A study on the oxidation kinetics of silicon in inductively coupled oxygen plasma
4. Surface study of YBa2Cu3O7−δepitaxial films cleaned by an atomic oxygen beam
5. Excimer Laser Ablation of Cryogenic $\bf NO_{2}$ Films
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1. Ultrahigh vacuum and low-temperature cleaning of oxide surfaces using a low-concentration ozone beam;Review of Scientific Instruments;2014-07
2. Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature;Analytical Sciences;2010
3. Interface Properties of the Two Step Oxide Layers by UV Light Excited Ozone Silicon Oxidation and Chemical Vapor Deposition (CVD)-SiO2 Film;Journal of the Vacuum Society of Japan;2010
4. Improvement in Chemical-Vapor-Deposited-SiO2Film Properties by Annealing with UV-Light-Excited Ozone;Japanese Journal of Applied Physics;2009-11-20
5. Advantage of Highly Concentrated (≥90%) Ozone for Chemical Vapor Deposition SiO2Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone;Japanese Journal of Applied Physics;2009-05-20
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