Difference of Spur Distribution in Chemically Amplified Resists upon Exposure to Electron Beam and Extreme Ultraviolet Radiation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference38 articles.
1. Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
2. Acid generation efficiency in a model system of chemically amplified extreme ultraviolet resist
3. Relationship between Acid Generator Concentration and Acid Yield in Chemically Amplified Electron Beam Resist
4. Side Wall Degradation of Chemically Amplified Resists Based on Poly(4-hydroxystyrene) for Extreme Ultraviolet Lithography
5. Computer simulation of ion recombination in irradiated nonpolar liquids
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1. Effects of X-Rays, Electron Beam, and Gamma Irradiation on Chemical and Physical Properties of EVA Multilayer Films;Frontiers in Chemistry;2022-05-11
2. Dependence of dose rate on the sensitivity of the resist under ultra-high flux extreme ultraviolet (EUV) pulse irradiation;Applied Physics Express;2021-05-12
3. Sensitivity enhancement of chemically amplified EUV resist by adding diphenyl sulfone derivatives;Advances in Patterning Materials and Processes XXXVII;2020-03-23
4. Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11
5. Sensitivity enhancement of chemically amplified EUV resists by adding acid-generating promoters;Japanese Journal of Applied Physics;2017-05-12
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