Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnxBuffer Layers for Tensile-Strained Ge Layers-Reference-Cited by-同舟云学术

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Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnxBuffer Layers for Tensile-Strained Ge Layers

Published:2009-04-20 Issue:4 Volume:48 Page:04C130
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimura Yosuke,Tsutsui Norimasa,Nakatsuka Osamu,Sakai Akira,Zaima Shigeaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

2. Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation

3. Strain-induced band gap shrinkage in Ge grown on Si substrate

4. Ge–Sn semiconductors for band-gap and lattice engineering

5. Epitaxy-Driven Synthesis of Elemental Ge/Si Strain-Engineered Materials and Device Structures via Designer Molecular Chemistry

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1. SiGeSn buffer layer for the growth of GeSn films;Journal of Applied Physics;2023-07-12

2. Study of strain evolution mechanism in Ge1−xSnx materials grown by low temperature molecular beam epitaxy;Journal of Crystal Growth;2022-01

3. Semiconductor nanowires: to grow or not to grow?;Materials Today Nano;2020-03

4. Enhanced mobility of Sn-doped Ge thin-films (≤50 nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization;Applied Physics Letters;2019-07-22

5. Influence of Sn precursors on Ge1−x Sn x growth using metal-organic chemical vapor deposition;Japanese Journal of Applied Physics;2018-12-04

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