Enhanced mobility of Sn-doped Ge thin-films (≤50 nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization
Author:
Affiliation:
1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
Funder
Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Science, and Technology n Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5096798
Reference33 articles.
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2. Ge based high performance nanoscale MOSFETs
3. High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation
4. Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors
5. Germanium CMOS potential from material and process perspectives: Be more positive about germanium
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2. Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation;Materials Science in Semiconductor Processing;2023-10
3. Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing;Materials Science in Semiconductor Processing;2023-06
4. High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures;Applied Physics Letters;2023-05-15
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