Interfacial Nucleation Control in Amorphous GeSn Thin Films Using Bilayer Structure-Reference-Cited by-同舟云学术

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Interfacial Nucleation Control in Amorphous GeSn Thin Films Using Bilayer Structure

Published:2023-04-24 Issue:8 Volume:23 Page:5535-5540
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Maeda Shintaro¹,Ishiyama Takamitsu¹,Saitoh Noriyuki²,Yoshizawa Noriko³,Suemasu Takashi¹,Toko Kaoru¹^ORCID

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Ibaraki, Japan

2. Electron Microscope Facility, TIA, AIST, 1-2-1 Namiki, Tsukuba 305-8564, Ibaraki, Japan

3. Global Zero Emission Research Center, AIST, 16-1 Onogawa, Tsukuba 305-8569, Ibaraki, Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Association for Chemical Innovation

Japan Society for the Promotion of Science

TEPCO Memorial Foundation

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00163

Reference50 articles.

1. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

2. Crystallization in amorphous germanium

3. Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

4. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

5. Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review;Advanced Electronic Materials;2024-05

2. Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization;Japanese Journal of Applied Physics;2024-01-05

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