Influence of Sn precursors on Ge1−x Sn x growth using metal-organic chemical vapor deposition
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SA/a=SAAD07/pdf
Reference41 articles.
1. Achieving direct band gap in germanium through integration of Sn alloying and external strain
2. Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
3. Lasing in direct-bandgap GeSn alloy grown on Si
4. Optically Pumped GeSn Microdisk Lasers on Si
5. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy
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