Photoreflectance Studies of Ga0.5In0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique-Reference-Cited by-同舟云学术

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Photoreflectance Studies of Ga0.5In0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique

Published:1992-05-01 Issue:Part 2, No. 5A Volume:31 Page:L571-L573
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hwang Jenn-Shyong,Hang Zhijiang,Tyan Shin-Long,Ding Sheng-Wei,Tung Jen-Hsiung,Chen Chin-Yuan,Lee Biing-Jye,Hsu Jung-Tsung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Absolute measurement of effective radiative-efficiency in GaAs grown with molecular-beam-epitaxy;Journal of Applied Physics;2017-06-14

2. Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance;Physica E: Low-dimensional Systems and Nanostructures;2008-04

3. Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy;Semiconductor Science and Technology;2004-05-19

4. Schottky barrier height and interfacial state density on oxide-GaAs interface;Journal of Applied Physics;2003-07

5. Photoreflectance studies of surface state density of InAlAs;Journal of Applied Physics;2001

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