Photoreflectance studies of surface state density of InAlAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference37 articles.
1. In situstudy of Fermi-level pinning onn- andp-type GaAs (001) grown by molecular-beam epitaxy using photoreflectance
2. See, for example, W. Mönch, inSemiconductor Surface and Interfaces, edited by G. Ertl (Springer, Berlin, 1993), and references therein.
3. Photoreflectance study of H2S plasma-passivated GaAs surface
4. Analytical model for I-V characteristics of JFETs with heavily doped channels
5. Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure
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