Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance-Reference-Cited by-同舟云学术

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Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance

Published:2008-04 Issue:6 Volume:40 Page:1975-1978
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Wang T.S.,Lin K.I.,Lin H.C.,Lee M.H.,Lu Y.T.,Hwang J.S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface

2. Hydrogen sulfide plasma passivation of gallium arsenide

3. Photoreflectance Studies of Ga0.5In0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique

4. Photoreflectance study of surface Fermi level in GaAs and GaAlAs

5. Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. β-detected NMR Study of Semi-Insulating GaAs;Physics Procedia;2012

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