Deposition of Aluminum Nitride by Remote Plasma-Enhanced Chemical Vapor Deposition Using Triisobutyle Aluminum-Reference-Cited by-同舟云学术

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Deposition of Aluminum Nitride by Remote Plasma-Enhanced Chemical Vapor Deposition Using Triisobutyle Aluminum

Published:1992-04-01 Issue:Part 2, No. 4A Volume:31 Page:L423-L425
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsumoto Akinori,Meikle Scott,Nakanishi Yoichiro,Hatanaka Yoshinori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices;Journal of Materials Chemistry C;2023

3. Aluminum surface nitriding by an atmospheric-pressure non-thermal plasma technique;Japanese Journal of Applied Physics;2022-01-24

4. Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films;Thin Solid Films;2006-02

5. Ultrahigh resistivity aluminum nitride grown on mercury cadmium telluride;Journal of Applied Physics;2001-12-15

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