Fabrication of a Nanometer-Scale GaAs Ridge Structure with a 92-MHz Anode-Coupled Reactive Ion Etcher Using $\bf Cl_{2}/N_{2}$ Mixed Plasmas-Reference-Cited by-同舟云学术

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Fabrication of a Nanometer-Scale GaAs Ridge Structure with a 92-MHz Anode-Coupled Reactive Ion Etcher Using $\bf Cl_{2}/N_{2}$ Mixed Plasmas

Published:1996-01-01 Issue:Part 2, No. 1A Volume:35 Page:L60-L62
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Saitoh Tadashi,Kanbe Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Actinometry of inductively coupled Cl2∕N2 plasmas for dry etching of GaAs;Journal of Applied Physics;2005-07-15

2. Patterning of cubic and hexagonal GaN by Cl2/N2-based reactive ion etching;Applied Physics Letters;1999-06-07

3. Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl[sub 2]–Ar mixture;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

4. Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology: hydrogen chloride versus GaAs(001) epilayers;Applied Physics A: Materials Science & Processing;1998-09-01

5. Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching;Japanese Journal of Applied Physics;1997-12-30

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