Patterning of cubic and hexagonal GaN by Cl2/N2-based reactive ion etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124131
Reference8 articles.
1. Reactive Ion Etching of GaN Thin Films
2. Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy
3. Polymerization of fluorocarbons in reactive ion etching plasmas
4. Reactive Ion Etching of GaN in BCl3 / N 2 Plasmas
5. Fabrication of a Nanometer-Scale GaAs Ridge Structure with a 92-MHz Anode-Coupled Reactive Ion Etcher Using $\bf Cl_{2}/N_{2}$ Mixed Plasmas
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1. Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar;Journal of Materials Science: Materials in Electronics;2011-12-22
2. Fabrication of two dimensional GaN nanophotonic crystals (31);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
3. Thermal reaction of polycrystalline AlN with XeF2;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-11
4. Etch mechanism and etch-induced effects in the inductively coupled plasma etching of GaN;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
5. Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride;Applied Surface Science;2002-05
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