Reactive Ion Etching of GaN Thin Films

Abstract

AbstractReactive ion etching of GaN grown by electron-cyclotron-resonance, microwave plasma-assisted molecular beam epitaxy on (0001) sapphire substrates was investigated. A variety of reactive and inert gases such as CC12F2, SF6, CF4, H2/CH4 mixtures, CF3Br, CF3Br/Argon mixtures and Ar were investigated. From these studies we conclude that of the halogen radicals investigated, Cl and Br etch GaN more effectively than F. The etching rate was found to increase with decreasing pressure at a constant cathode voltage, a result attributed to larger mean free path of the reactive species.