Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy

Published:1996-02-28 Issue:Part 1, No. 2B Volume:35 Page:1333-1339
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujikura Hajime,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical behavior of GaAs∕AlGaAs ringlike nanostructures;Journal of Applied Physics;2007-01-15

2. 1.3μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (221)A InP substrates by molecular beam epitaxy;Physica E: Low-dimensional Systems and Nanostructures;2006-05

3. (In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A;Journal of Applied Physics;2005-03-15

4. Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations;Japanese Journal of Applied Physics;2000-07-30

5. Formation of 〈001〉-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl;Journal of Electroanalytical Chemistry;1999-09

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