(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1862763
Reference18 articles.
1. Stimulated emission in semiconductor quantum wire heterostructures
2. Fabrication of highly uniform quantum wire superlattices by flow rate modulation epitaxy on V-grooved substrates
3. Few-Particle Effects in Semiconductor Quantum Dots: Observation of Multicharged Excitons
4. Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth
5. Facetted MBE growth of (GaAl)As on RIE patterned surfaces
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Today's challenges in quantum dot materials research for tomorrow's quantum functional devices;physica status solidi (b);2007-08
2. InAs∕InGaAsP sidewall quantum dots on shallow-patterned InP (311)A;Journal of Applied Physics;2006-09-15
3. Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP∕InP;Journal of Applied Physics;2006-05-15
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