Today's challenges in quantum dot materials research for tomorrow's quantum functional devices
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference44 articles.
1. Self-organized anisotropic strain engineering: a new concept for quantum dot ordering
2. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy
3. InAs∕InP quantum dots emitting in the 1.55μm wavelength region by inserting submonolayer GaP interlayers
4. Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy
5. Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomistic behaviour of (n×3)-reconstructed areas of InAs–GaAs(001) surface at the growth condition;Journal of Crystal Growth;2017-11
2. In-assisted deoxidation of GaAs substrates for the growth of single InAs/GaAs quantum dot emitters;Semiconductor Science and Technology;2015-04-07
3. MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics;physica status solidi (b);2007-08
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