Preparation and Characterization of Ferroelectric Bi4Ti3O12Thin Films Grown on (100)-Oriented Silicon Wafers-Reference-Cited by-同舟云学术

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Preparation and Characterization of Ferroelectric Bi4Ti3O12Thin Films Grown on (100)-Oriented Silicon Wafers

Published:1996-09-30 Issue:Part 1, No. 9B Volume:35 Page:4984-4986
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamaguchi Masaki,Nagatomo Takao,Omoto Osamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microscale materials design using focused proton-beam writing;Nanoscale Ferroelectric-Multiferroic Materials for Energy Harvesting Applications;2019

2. Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate;Journal of Applied Physics;2003-04-15

3. Ferroelectric properties of epitaxial Bi4Ti3O12 films deposited on epitaxial (100) Ir and (100) Pt films on Si by sputtering;Vacuum;2002-08

4. Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates;Journal of Materials Research;2001-11

5. Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering;Applied Physics A Materials Science & Processing;2001-01

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