Ferroelectric properties of epitaxial Bi4Ti3O12 films deposited on epitaxial (100) Ir and (100) Pt films on Si by sputtering
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. Preparation and Characterization of Ferroelectric Bi4Ti3O12Thin Films Grown on (100)-Oriented Silicon Wafers
2. Preparation of Bi4Ti3O12Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
3. Improvement of the crystalline quality of an yttria-stabilized zirconia film on silicon by a new deposition process in reactive sputtering
4. Heteroepitaxial Growth of Yttria-Stabilized Zirconia Film on Silicon by Reactive Sputtering
5. Heteroepitaxial growth of yttria-stabilized zirconia film on oxidized silicon by reactive sputtering
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2. Tribological properties of BixTiyOz films grown via RF sputtering on 316L steel substrates;DYNA;2015-06-22
3. Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La2Ti2O7 Thin Films Grown on (110)-Oriented Doped Nb:SrTiO3 Substrates;Advanced Engineering Materials;2011-07-08
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