Heteroepitaxial Growth of Yttria-Stabilized Zirconia Film on Silicon by Reactive Sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Formation of {111} oriented domains during the sputtering epitaxy growth of (001) oriented Iridium films;Journal of Physics: Condensed Matter;2024-07-11
2. Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis;Journal of Vacuum Science & Technology B;2019-03
3. Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer;Japanese Journal of Applied Physics;2017-06-26
4. Sputter Deposition of YSZ Epitaxial Buffer Layer at Wafer Level for Piezoelectric MEMS Utilizing PZT-based Monocrystalline Thin Film;IEEJ Transactions on Sensors and Micromachines;2016
5. Basic Process of Sputtering Deposition;Handbook of Sputtering Technology;2012
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