Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s003390000563.pdf
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Origin of Multiferroism of Ion Doped at Different Sites: Bi4Ti3O12 Bulk and Nanoparticles;physica status solidi (b);2023-11-02
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3. Microstructure and ferroelectric properties of Ta-doped Bi3.25La0.75Ti3O12/ZnO thin film capacitors;Ceramics International;2022-02
4. Influence of tantalum on mechanical, ferroelectric and dielectric properties of Bi-excess Bi3.25La0.75Ti3O12 thin film;Applied Surface Science;2019-01
5. Influence of annealing times on morphological characteristics of ceramic thin films by RF-magnetron sputtering using Zn-enriched (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic target;Journal of Materials Science: Materials in Electronics;2011-11-03
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