In Situ Fourier Transform Infrared Measurements of Si Surface and Bulk Plasmas in Cl2/O2and HBr/O2Electron Cyclotron Resonance Plasma Etching: Influence of Oxygen on Reaction Products
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. Characteristics of reactive ion etching lag in HBr/O2plasma etching of silicon trench for nanoscale device;Japanese Journal of Applied Physics;2014-02-03
4. Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma;Japanese Journal of Applied Physics;2013-11-01
5. Thin film processing using S-layer proteins: Biotemplated assembly of colloidal gold etch masks for fabrication of silicon nanopillar arrays;Colloids and Surfaces B: Biointerfaces;2007-06
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