Characteristics of reactive ion etching lag in HBr/O2plasma etching of silicon trench for nanoscale device
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference27 articles.
1. Microscopic uniformity in plasma etching
2. Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems
3. Pattern shape effects and artefacts in deep silicon etching
4. BSM 7: RIE lag in high aspect ratio trench etching of silicon
5. Characterization of reactive ion etch lag scaling
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