Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=12/a=124002/pdf
Reference19 articles.
1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
2. Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0001) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks
3. Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties
4. Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy
5. Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy
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