Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates-Reference-Cited by-同舟云学术

Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates

Published:2009-10-23 Issue:11 Volume:2 Page:111002
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Sun Haifeng,Alt Andreas R.,Marti Diego,Vetter Mathias,Benedickter Hansruedi,Bolognesi C. R.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/2/i=11/a=111002/pdf

Reference8 articles.

1. Millimeter-wave GaN HFET technology

2. AlGaN/GaN high electron mobility transistors on Si(111) substrates

3. Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs

4. 12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

5. High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation

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1. More than 60% RF loss reduction and improved crystal quality of GaN-on-Si achieved by in-situ doping tert-butylphosphorus;Journal of Crystal Growth;2024-01

2. AlInN-Based HEMTs for Large-Signal Operation at 40 GHz;IEEE Transactions on Electron Devices;2013-10

3. New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor;Japanese Journal of Applied Physics;2013-08-01

4. RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110);Applied Physics Express;2011-06-02

5. 110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates;Applied Physics Express;2010-12-03