110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=12/a=124101/pdf
Reference13 articles.
1. The toughest transistor yet [GaN transistors]
2. Multibit Programmable Flash Memory Realized on Vertical Si Nanowire Channel
3. Low-Noise Microwave Performance of 0.1 $\mu$m Gate AlInN/GaN HEMTs on SiC
4. AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
5. 205-GHz (Al,In)N/GaN HEMTs
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