Possibility of Forming 18-nm-Pitch Ultrahigh Density Fine Dot Arrays for 2 Tbit/in.2Patterned Media Using 30-keV Electron Beam Lithography
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference8 articles.
1. Effect of ion beam patterning on the write and read performance of perpendicular granular recording media
2. Fine pit pattern formation by EB-writing for a high density optical recording
3. Microscopic Magnetic Characteristics of CoCrPt-Patterned Media Made by Artificially Aligned Self-Organized Mask
4. Formation of dot arrays with a pitch of 20 nm × 20 nm for patterned media using 30 keV EB drawing on thin calixarene resist
5. Extremely Small Proximity Effect in 30 keV Electron Beam Drawing with Thin Calixarene Resist for 20×20 nm2Pitch Dot Arrays
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2. Ordering of 6-nm-sized nanodot arrays with 10-nm-pitch using self-assembled block copolymers along electron beam-drawn guide-lines;Microelectronic Engineering;2014-07
3. Controlling of 6 nm Sized and 10 nm Pitched Dot Arrays Ordered along Narrow Guide Lines Using PS–PDMS Self-Assembly;ACS Applied Materials & Interfaces;2014-04-30
4. Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10 nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control;Applied Physics Letters;2014-03-03
5. Fabrication of 6-nm-Sized Nanodot Arrays with 12 nm-Pitch along Guide Lines Using both Self-Assembling and Electron Beam-Drawing for 5 Tbit/in2 Magnetic Recording;Key Engineering Materials;2013-12
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