Improved Resistive Switching Dispersion of NiOxThin Film by Cu-Doping Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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3. Resistive random access memory characteristics of NiO thin films with an oxygen-deficient NiO0.95 layer;Ceramics International;2021-04
4. Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO;RSC Advances;2018
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