Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO-Reference-Cited by-同舟云学术

Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO

Author:

Ge Ni-Na¹²³⁴^ORCID,Gong Chuan-Hui¹²³⁴,Yuan Xin-Cai¹²³⁴,Zeng Hui-Zhong⁵⁶⁷⁴,Wei Xian-Hua¹²³⁴^ORCID

Affiliation:

1. State Key Laboratory of Environment-friendly Energy Materials

2. Southwest University of Science and Technology

3. Mianyang 621010

4. P. R. China

5. State Key Laboratory of Electronic Thin Films and Integrated Devices

6. University of Electronics Science and Technology of China

7. Chengdu 610054

Abstract

We investigated the bipolar resistive switching (BRS) properties of Mn-doped NiO thin films by sol–gel spin-coating.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

Reference28 articles.

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