The Resistive Switching Characteristics in ZrO2 and Its Filamentary Conduction Behavior
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/9/7/551/pdf
Reference39 articles.
1. Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film
2. Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt Stack
3. Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
4. Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films
5. Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
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