Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film-Reference-Cited by-同舟云学术

Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film

Published:2020-02-11 Issue:9 Volume:12 Page:10681-10688
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Yuting¹,Yan Yu¹,Wu Jianwen¹,Wang Chen¹,Lin Jun Ye¹,Zhao Jin Shi¹,Hwang Cheol Seong²^ORCID

Affiliation:

1. Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin 300384, China

2. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Daehag-dong, Gwanak-gu, Seoul 151-744, Republic of Korea

Funder

Natural Science Foundation of Tianjin City

Leading Academic Talents in Tianjin

Tianjin Science and Technology

Thousand Talents Plan of Tianjin

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b22687

Reference36 articles.