Utilizing H2S to sulfurize transition metal and oxide barriers for suppressing resistivity scaling of ruthenium metallization

Author:

Chen Yu-LinORCID,Hsiao Kai-Yuan,Jhan Dun-Jie,Lu Ming-YenORCID,Keng Pei YuinORCID,Chiu Kun-AnORCID,Lin Yu-Wei,Chang Shou-Yi

Funder

Taiwan Semiconductor Manufacturing Company

National Science and Technology Council

Publisher

Elsevier BV

Reference40 articles.

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5. Electrical resistivity model for polycrystalline films: the case of specular reflection at external surfaces;Mayadas;Appl. Phys. Lett.,1969

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