Energy Band Control of GaAsSb-Based Backward Diodes to Improve Sensitivity of Millimeter-Wave Detection
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
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1. III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting;Japanese Journal of Applied Physics;2021-02-09
2. Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias;AIP Advances;2020-08-01
3. Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires;Japanese Journal of Applied Physics;2020-02-06
4. Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition;Applied Physics Express;2019-09-02
5. 24GHz Zero-Bias Asymmetrical Spacer Layer Tunnel Diode Detectors;2019 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT);2019-08
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