In situSi Wafer Surface Temperature Measurement during Flash Lamp Annealing-Reference-Cited by-同舟云学术

In situSi Wafer Surface Temperature Measurement during Flash Lamp Annealing

Published:2010-04-20 Issue:4 Volume:49 Page:04DA20
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamada Yoshiro,Aoyama Takayuki,Chino Hajime,Hiraka Kensuke,Ishii Juntaro,Kadoya Satoru,Kato Shinichi,Kiyama Hiroki,Kondo Hideki,Kuroiwa Tohru,Matsuo Kaoru,Owada Tatsushi,Shimizu Takao,Yokomori Takehiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. 10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing

2. Recent developments in rapid thermal processing

3. In-situMeasurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation

4. Polaradiometer—a New Instrument for Temperature Measurement

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