Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier-Reference-Cited by-同舟云学术

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Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier

Published:2003-04-01 Issue:Part 2, No. 4A Volume:42 Page:L353-L355
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wong Michael M.,Chowdhury Uttiya,Sicault Delphine,Becher David T.,Denyszyn Jonathan C.,Choi Jin Ho,Zhu Ting Gang,Feng Milton,Dupuis Russell D.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=4A/a=L353/pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Terahertz emission spectroscopy of GaN-based heterostructures;Journal of Applied Physics;2021-06-28

2. Mapping the electrostatic potential across AlGaN∕AlN∕GaN heterostructures using electron holography;Applied Physics Letters;2007-01-15

3. Influence of AlN interfacial layer on electrical properties of high-Al-content Al 0.45 Ga 0.55 N/GaN HEMT structure;Applied Surface Science;2006-11

4. High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al2O3∕Si3N4 gate insulator;Applied Physics Letters;2005-08-15

5. Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates;Applied Physics Letters;2004-12-13

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