Metal Organic Vapor Phase Epitaxy of ZnO on GaN/Si(111) Using Tertiary-Butanol as O-Precursor-Reference-Cited by-同舟云学术

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Metal Organic Vapor Phase Epitaxy of ZnO on GaN/Si(111) Using Tertiary-Butanol as O-Precursor

Published:2003-12-10 Issue:Part 1, No. 12 Volume:42 Page:7474-7477
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oleynik Nikolay,Dadgar Armin,Bläsing Jürgen,Adam Marco,Krtschil André,Forster Daniel,Bertram Frank,Diez Anette,Seip Markus,Greiling Arnd,Christen Jürgen,Krost Alois

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=12R/a=7474/pdf

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ZnO and Related Materials;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. Chemical reaction mechanism of ZnO grown using DEZn and N2O in MOCVD;CrystEngComm;2018

3. Fast-response photoconductive ultraviolet light detectors fabricated using high-quality ZnO films obtained by plasma-assisted molecular beam epitaxy;Ceramics International;2017-10

4. Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate;Journal of Crystal Growth;2012-06

5. The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a γ-Al2O3buffer layer;CrystEngComm;2012

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